- News
27 May 2014
MACOM to showcase GaN portfolio at IMS
In booth 915 at the IEEE MTT International Microwave Symposium (IMS 2014) in Tampa, FL, USA (4-6 June), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) is showcasing its gallium nitride (GaN) product portfolio as well as featuring a suite of new products targeted at applications spanning industrial, scientific, medical, point-to-point wireless and X-band radar.
At IMS, MACOM will be presenting:
- GaN portfolio - featuring what is claimed to be the industry’s broadest portfolio of GaN power products, ranging from 100W GaN in plastic to 1000W ceramic GaN devices.
- Demonstration of MACOM’s GaN-on-silicon integrated amplifier family. The live demo will feature matched, broadband, integrated amplifiers operating over a 30-2500MHz frequency band, showcasing the ease of use of the products for a variety of applications.
- E-band amplifier - what is claimed to be the industry’s highest-power broadband MMIC power amplifier with an integrated power detector, delivering saturated output power (Psat) of 25dBm and gain of 20dB over the 71-86GHz frequency band.
- A new family of high-performance, ultra-compact broadband mixers, suitable for multi-market customers.
- X-band multi-function module - afully integrated MMIC packaged in a 7x7 QFN, enabling dual-path transmit/receive operation over the X-band.
MACOM staff will also be participating in:
- Arrow’s booth #609 (2 June at 1pm) - ‘GaN-on-silicon Product Reliability: Methods, Results, and Recommendations for the RF Designer’.
- MWJ Panel (4 June at 12pm) - ‘Path to 5G – Design and Test Challenges for the Future’, which will examine the challenges to device design and device/system testing for 5G technologies such as mm-wave/Terahertz transceivers, massive MIMO, carrier aggregation, CoMP, AESA radios and other related technologies for the future.
- IMS Technical Sessions (4 June at 14:50-15:00 in Room 22/23) - WE3B-5: ‘A Compact High Efficiency GaN-Si PA Implemented in a Low Cost DFN Package with 71% Fractional Bandwidth’.