- News
10 March 2014
EPC introduces development boards for EPC8000 family of eGaN FETs
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced a family of development boards - the EPC9022 through EPC9030 - to simplify evaluation of its EPC8000 family of ultra-high-frequency eGaN power transistors.
The EPC8000 family of high-frequency eGaN FETs has switching transition speeds in the sub-nanosecond range, making them capable of hard-switching applications above 10MHz - blurring the line between power and RF transistors. Even beyond the 10MHz for which they were designed, they exhibit good small-signal RF performance with high gain well into the low-GHz range, making them a competitive choice for RF applications, says the firm. The eGaN FETs are suitable for applications such as wireless power and 65V and 100V devices for envelope tracking, where extremely fast power transistor switching is required.
Products in the EPC8000 family are available with on-resistance values from 125mΩ through 530mΩ, and three blocking voltage capabilities: 40V, 65V and 100V.
To simplify the evaluation of the family of eGaN FETs, EPC is offering a development board for each device in the new product family. The development boards are 2” x 1.5” and contain two eGaN FETs in a half-bridge configuration with a minimum switching frequency of 500kHz. The boards contain all critical components and layout for optimal high-frequency switching performance. There are various probe points to facilitate simple waveform measurement and efficiency calculation.
Evaluation units of the EPC8000 family of devices are available in 2- and 10-piece packs, starting at $23, through Digi-Key Corp. EPC9022 through EPC9030 development boards are priced at $150 each.
EPC launches eGaN FETs for use in both power semiconductor and RF applications