3 June 2014

TriQuint showcases high-performance GaN solutions at IMS

RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA is showcasing its new high-performance technologies in booth 1533 at the IEEE MTT-S International Microwave Symposium (IMS 2014) exhibition in Tampa, FL (3-5 June).

“TriQuint is on track to deliver more than 75 new products to the infrastructure and defense markets in the first half of 2014, adding to our record of 130 products released in 2013,” notes VP & general manager James Klein, Infrastructure and Defense Products.

At the event, TriQuint is discussing the following product innovations:

• TriQuint's patented Spatium technology enables satellite communications for commercial and defense use of the Ka-band spectrum, opening up new satellite possibilities. Its Ka-band solid-state power, bandwidth and efficiency ensures that its high-frequency broadband connectivity can be used for media-rich and high-bandwidth communications such as airborne wireless access; defense communications; and video for unmanned aerial vehicles or systems. Spatium combines multiple gallium nitride (GaN) or gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs), enabling cost-effective and reliable solid-state broadband power amplification, says the firm.

• GaN technology performance for defense, aerospace and foundry customers including high power and power-added efficiencies for L-, S-, C-, X-, Ku- and Ka-band radars and electronic warfare (EW) applications and Ku and Ka-band satcom; a new family of transistors; new packaging; and highly robust amplifiers including TQGaN25, TQGaN25HV and TQGaN15 technologies. With what is claimed to be the broadest GaN portfolio of processes and products for the defense & aerospace markets, TriQuint offers GaN power amplifiers from L- through Ka-band, low-noise amplifiers (LNAs) from S- to X-band and RF switches from DC to K-band.

• Optical and cable infrastructure including dual- and quad-channel limiting and linear drivers and transimpedance amplifiers (TIAs) for next-generation 100, 200 and 400Gb/s optical systems; GaN and GaAs MMICs for CATV; and temperature-compensated notch filters enabling the coexistence of Wi-Fi and LTE.

• Base-station, WLAN and point-to-point (P2P) including bypass LNAs with what is claimed to be the lowest noise in the industry, enabling high-sensitivity radios; WLAN power amplifiers enabling 802.11ac; TriQuint’s family of drivers and final-stage base transceiver station (BTS) GaN power amplifiers; new 28GHz and 32GHz linear power amplifiers, and a 38/42GHz upconverter for the P2P radio market; and small-cell base-station technology to increase future 4G network coverage.

TriQuint says that its ongoing development of GaN-based devices is leading to smaller, more efficient power amplifiers, used for military radar and electronic warfare programs as well as commercial wireless communications and infrastructure.

Also at IMS, TriQuint technologists are giving the following presentations:

• ‘New GaN and GaAs Solutions Overview’ by Grant Wilcox;

• ‘Broadband High-Efficiency GaN Power Amplifiers’ by Bumjin Kim, Mark Greene and Matt Osmsus;

• ‘Advances in Low Noise Technology’ by Jingshi Yao, Xiaopeng Sun and Bary Lin;

• ‘GaN-Based Power Supplies and Power Supply Modulators for Efficient Powering of RF PAs’ by David Fanning, Vipan Kumar, Charles Campbell and JL Jimenez;

• ‘Compact Ku-Band Transmit-Receive MMIC for Airborne Phased Array Applications’ by Donald Allen and Rajkumar Santhakumar;

• ‘Slant Field Plate Model for Field Effect Transistors’ by Robert Coffie; and

• ‘Efficiency and Linearity Enhancement of Microwave GaN PAs using Harmonic Injection’ by Dr Michael Dean Roberg.

Tags: TriQuint

Visit: www.triquint.com