4 June 2014

Sumitomo Electric launches GaN HEMTs for space applications

In booth 333 at the IEEE MTT-S International Microwave Symposium (IMS2014) in Tampa, FL (3-5 June), RF, wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA (SEDU, a subsidiary of Japan’s Sumitomo Electric Industries Ltd, or SEI) is showcasing next-generation gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices for space applications.

SEDU says GaN provides the benefits that space applications require such as operation at much higher temperatures, higher power-added efficiency (PAE) and wider bandwidth than gallium arsenide (GaAs), all while reducing overall operational cost.

“Sumitomo Electric is dedicated to offering a broad range of space qualified RF products over 30 years,” says SEDU’s president John Wyatt. “The combination of high power, high gain and excellent efficiency performance makes our next-generation GaN HEMTs for space very attractive design solution,” he reckons. “For example ES/SGN15H150IV provides 150W output power at 1.575GHz with power-added efficiency of 71.2%.”

Operating at 50V, the new devices offer high output power in a single-ended package, with PAE of more than 70% and gain of 18dB at 1.5GHz.

Samples for evaluation up to 150W will be available in August.

See related items:

Sumitomo Electric launches its first Ku-band GaN HEMT for satcoms

Sumitomo launches next-gen GaN HEMT for L and S-band satellite applications

Tags: Sumitomo Electric GaN HEMT

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