30 June 2014

Morgan Advanced Materials announces improved CVD SiC and pBN ceramic materials

Morgan Advanced Materials has announced advances in its Technical Ceramics business’ range of materials grown using chemical vapor deposition (CVD) processes. Its CVD silicon carbide (SiC) and pyrolytic boron nitride (pBN) materials suit applications including rapid thermal processing (RTP) and plasma etch process chamber components, as well as metalorganic CVD (MOCVD) tools for high-brightness white LED manufacturing using indium gallium nitride (InGaN).

Morgan says that its improved CVD SiC growth capability enables the manufacture at production volumes of components with diameters of 300mm+ and thicknesses of more than 10mm for recently developed plasma etch applications. Through access to ultrasonic machining capability, Morgan offers high-tolerance CNC machining and precision hard grinding, as well as the patented Rmax process for producing focus CVD SiC ring shapes.

Morgan says that its high-purity (99.999%+) SiC material has high thermal conductivity, is resistant to chemical erosion, and features minimal particulate generation, making it suitable for use in chlorine and fluorine plasma etch processes. The material is suited for use in producing GDMs (gas distribution plates) where the material’s erosion resistance can lead to long life and extended tool PM (preventative maintenance) schedules. Ultrasonic drilling can provide holes with diameters as small as 0.5mm, for custom etch applications.

High-purity (99.99%+) PBN materials have a working temperature in excess of 1500°C, and feature high electrical resistivity and high dielectric strength. Since they have extremely low out-gassing and are non-wetting and non-toxic, the PBN materials are inert to most acids, alkalis and organic solvents and have high thermal conductivity in the ‘a’ direction. The materials are suitable for manufacturing PBN-coated graphite heaters and PBN effusion cell components, the firm adds.

Tags:  pBN

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