15 August 2014

EPC presenting latest-generation eGaN FET performance at power industry conferences in China

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, is to give application-focused presentations on its latest-generation eGaN technology at two industry tradeshows in China:

• 3rd Wireless Power World 2014 (Shanghai, 26-27 August)
  On 26 August (4.30–5.10pm), in ‘eGaN FET Based Wireless Energy Transfer – New Zero Voltage Switching (ZVS) Class-D Topology’, Dr Johan Strydom, VP, Application Engineering will show how the superior characteristics of eGaN FETs, such as low output capacitance, low input capacitance, low parasitic inductances and small size, make them suitable for increasing efficiency in highly resonant, Rezence (A4WP)-compliant, wireless power transfer systems. A comparison between amplifiers designed using MOSFETs and eGaN FETS will examine comparative peak power, load variation, and load regulation performance.

• IIC China 2014 Fall Exhibition - Power Management & Power Semiconductor conference (Shenzhen, 4-5 September)
  On 4 September (3.40–4.20pm), in ‘Generation 4 eGaN Technology’, Peter Cheng, Asia Pacific field applications director, will discuss the latest developments in DC-DC converters with eGaN FETs. The firm’s new Gen 4 family of eGaN FETs features significant gains in key switching figures of merit that widen the performance gap with the aging power MOSFET, the firm says. Application examples include a 12V to 1.2V, 50A point-of-load converter achieving 93.5% efficiency, and a 48V to 12V, 30A non-isolated DC-DC intermediate bus converter achieving efficiency above 98%.

Tags: EPC E-mode GaN FETs

Visit: www.wirelesspower-world.com/meeting/Sponsors

Visit: www.english.iic-china.com

Visit: http://epc-co.com/epc/EventsandNews/Events