21 August 2014

Cree and APC Novacom extend partnership for GaN HEMT distribution in Europe

Cree Inc of Durham, NC, USA is enhancing its support of the European market by extending its partnership with UK-based distributor APC Novacom.

APC Novacom now stocks all Cree RF devices that do not require a European Union (EU) license, including gallium nitride (GaN) high-electron-mobility transistor (HEMT) die, and supports Cree’s European market through both volume distribution and small-volume stock for network representatives.

Suited to a wide range of RF communications applications — satellite communications (SatCom), military satellite communications (MilSatCom), broadband amplifiers, radar, point-to-point radio, telecoms, data links, and tactical data links — Cree GaN HEMT devices are said to exhibit superior performance properties compared to silicon (Si) or gallium arsenide (GaAs) die, including: higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity, and higher efficiency. The GaN HEMTs also offer greater power density and wider bandwidths than competing Si and GaAs technologies.

Cree RF products now available through APC Novacom include: general-purpose broadband die, general-purpose 28V and 40V broadband GaN HEMTs, 28V and 50V telecom GaN HEMTs, 0.25 micron die, and GaN HEMTs for satellite communications and L-, S-, X-, and C-band applications.

Tags: Cree GaN HEMT

Visit: www.cree.com/RF

Visit: www.apc-novacom.co.uk