8 April 2014

Trifortune orders Aixtron MOCVD system for GaN LEDs on alternative substrates

Deposition equipment maker Aixtron SE of Aachen, Germany says that Jiangsu Trifortune Electronic Technology Co Ltd of Jintan City, China has ordered an AIX G5 HT metal-organic chemical vapor deposition (MOCVD) system to develop gallium nitride (GaN)-based high-brightness light-emitting diodes (HB-LEDs).

Trifortune was founded in May 2013. In phase one of its strategic business plan the firm made an initial investment into a pre-production demonstration line located at Shahe, Beijing.

The new system will be equipped to handle 56x2-inch wafers per run and will be installed at Trifortune’s R&D center. The developed process will be transferred to mass production in the Jiangsu area upon completion of the research.

“We are developing GaN processes to grow LEDs on substrates that offer some advantages compared to the well-established sapphire substrates,” says Trifortune’s technical head Dr Hu. “To compete in the HB-LED market, there is a real need to achieve the maximum yield in our manufacturing process, so that products with better performance in lumen per dollar can be established. The AIX G5 HT system is widely acknowledged as having the top yields in LED mass production, along with excellently repeatable performance at high growth rates,” he comments.

“We are very pleased to contribute to Trifortune’s success and to share our comprehensive expertise in optimization of epitaxy yields with them,” says Aixtron’s chief technology officer Andreas Toennis.

Tags: Aixtron MOCVD

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