16 September 2013

Aethercomm launches 50W, 6-18GHz GaN RF amplifier for aerospace & defense applications

Aethercomm Inc of San Marcos, CA, USA, which designs and makes high power RF amplifiers, subsystems and systems for use in radar, electronic warfare, communication systems, and test & measurement, is launching the SSPA 6.000-18.000-50 high-power super-broadband gallium nitride (GaN) RF and microwave amplifier operating at 6-18GHz for aerospace and defense applications.

Packaged in a modular housing of 8.5 by 3.5 by 1.38 inches, the solid-state power amplifier (SSPA) offers high output power of 50W over a multi-decade bandwidth with power-added efficiency, and operates at a base plate temperature of -40°C to 55°C. The device has a typical P3dB of 40W at room temperature with a minimum of 25W.

Noise figure at room temperature is 12dB typical. The amplifier offers a typical large-signal power gain of 47dB with a typical gain flatness of ±1.0dB. The power and gain flatness across the band is extremely flat for the bandwidth, says the firm. Input VSWR is 2.0:1 maximum. Class AB quiescent current is 8.5A typical employing a +26V DC supply.

The SSPA includes an external DC blanking command that enables and disables the module in less than 20 microseconds. A logic low or open circuit commands the PA OFF. A logic high commands the amplifier ON.

Standard features include over/under voltage protection and reverse polarity protection. Input and output RF connectors are SMA female. DC and command voltages are accessible via a DSUB connector.

Tags: Solid-state power amplifiers GaN PAs

Visit: www.aethercomm.com/products/106