15 October 2013

Microsemi’s new 650V SiC Schottky diodes target improved system efficiency in compact footprint for high-power industrial applications

Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems) has expanded its silicon carbide (SiC) Schottky diode product family with a new line of 650V solutions, targeted at high-power industrial applications including solar inverters.

Microsemi notes that, since SiC offers benefits compared to silicon (including a higher breakdown field strength and higher thermal conductivity), designers can create products with better performance characteristics encompassing zero reverse recovery, temperature-independent behavior, higher-voltage capability and higher-temperature operation to achieve new levels of performance, efficiency and reliability.

“Microsemi’s SiC power semiconductors are ideal for power electronic designers looking to improve system efficiency,” reckons James Kerr, senior product marketing manager for Microsemi’s Power Products Group. "Silicon carbide is a game-changing technology for many of our customers,” he adds. “With in-house fabrication capabilities, a comprehensive portfolio of SiC solutions and a roadmap that includes several new SiC products, Microsemi is positioned to capitalize on this growing market opportunity.”

The new 650V SiC Schottky diode product portfolio (in production now) includes:

• APT10SCD65K (650V, 10A, TO-220 package);
• APT10SCD65KCT (650V, 10A, common cathode TO-220 package);
• APT20SCD65K (650V, 20A, TO-220 package); and
• APT30SCD65B (650V, 30A, TO-247 package).

The new devices are also used in Microsemi’s power modules, which are used in aerospace, welding, battery charging and other high-power industrial applications.

Tags: Microsemi SiC Schottky barrier diodes

Visit: www.microsemi.com