9 October 2013

MACOM launches 5W GaN power transistor in 2.5mm x 4.5mm surface-mount plastic package

In booth #169 at European Microwave Week (EuMW 2013) in Nurnberg, Germany (6-11 October), M/A-COM Technology Solutions Inc of Lowell, MA, USA, which makes semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications, has launched a gallium nitride (GaN) unmatched wideband transistor in an SOT-89 package that is suited to 50V operation in driver and power applications.

MACOM says that the MAGX-000040-00500P is an effective solution for those needing a reliable power device with wideband performance and high-voltage operation. Operating over DC-4.0GHz frequency bandwidth, the device is packaged in a lightweight 2.5mm x 4.5mm SOT-89 plastic surface-mount package that allows easy implementation and assembly, it is claimed. The transistor delivers reliable operation at junction temperature of 158°C in CW mode, with the device being rated to a maximum junction temperature of 200°C. With small size, surface-mount assembly and reliable high-voltage operation, the device provides a high-performing alternative to traditional flanged or metal-backed module components, says the firm.

“RF and microwave designers are continuously challenged to improve size, weight and performance (SWaP) of radar and communication systems,” says product manager Paul Beasly. “The newest 5W addition to the GaN in Plastic family extends MACOM’s leadership in supporting customers to meet design challenges with the key advantages of 50V bias, CW operation and small-size, surface-mount plastic packaging.”

Production quantities and samples of MAGX-000040-00500P are available from stock.

See related items:

MACOM launches first surface-mount L-band 90W GaN power module

MACOM launches 90W, 50W and 15W GaN in plastic transistors

M/A-COM Tech launches GaN RF power transistors for L- and S-band pulsed radar

Tags: MA-COM GaN RF power transistors

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