20 November 2013

Mitsubishi Electric launches Ku-band low-noise GaAs HEMT for DBS receiver modules

Tokyo-based Mitsubishi Electric Corp has launched the MGF4937AM gallium arsenide (GaAs) high-electron-mobility transistor (HEMT), as a low-noise amplifier (LNA) for receiver modules in direct broadband satellites (DBS) and very small aperture terminals (VSAT).

Offering what is claimed to be the lowest noise-figure performance among fully molded package products, the new GaAs HEMT is targeted at simplifying the manufacturing and improving the performance of receiver module systems. Shipments will begin on 20 December at an initial production volume of 4 million units per month. Mitsubishi Electric will exhibit the MGF4937AM GaAs HEMT at the 2013 Microwave Workshops& Exhibition (MWE 2013) in Pacifico Yokohama, Japan (27-29 November).

The market for wireless communication systems using satellites is growing rapidly, mainly in developing countries because they can be deployed at lower costs than wired systems using optical fiber networks, says Mitsubishi Electric. Demand is hence rising for DBS and VSAT receiver modules that offer both improved noise performance and simplified manufacturing. Conventionally, hollow-type packaged transistors are generally used in first-stage LNAs due to their strong noise performance, but this complicates assembly.

Mitsubishi Electric says that, in contrast, its MGF4937AM GaAs HEMT improves the transistor structure and optimizes packaging while achieving noise performance that is unsurpassed for a fully molded package and almost the equal of hollow-type packages, it is claimed. Specifically, the minimum noise figure (NF) of 0.37dB (at f=12GHz, typical) is 0.08dB less than conventional fully molded package products, contributing to higher performance in receiver modules. The recommended bias conditions are VDS=2V and ID=10mA, and the associated gain (Gs) is 13.0dB (f=12GHz, typical).

The firm says that, as well as having a simple structure (as a standard 4-pin fully molded package), replacing hollow-type package transistors simplifies the customer’s production line, enabling greater efficiency.

Tags: Mitsubishi Electric

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