29 November 2013

GeneSiC launches 650-3300V SiC Schottky rectifiers in small-form-factor surface-mount packages

Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced the immediate availability of a new family of industry-standard surface-mount SMB (JEDEC DO-214AA)-packaged SiC Schottky rectifiers operating in the 650-3300V range.

The firm says that incorporating the high-voltage, reverse-recovery-free, high-frequency and high-temperature-capable SiC diodes can increase conversion efficiency and reduce the size/weight/volume of multi-kV assemblies. The products are targeted at micro-solar inverters as well as voltage multiplier circuits used in a wide range of x-ray, laser and particle-generator power supplies.

Contemporary micro-solar inverters and voltage multiplier circuits can suffer from low circuit efficiencies and large sizes because of the reverse recovery currents from silicon rectifiers, says GeneSiC. At higher rectifier junction temperatures, this situation becomes worse because the reverse recovery current in silicon rectifiers increases with temperature.

With the thermal constraints of high-voltage assemblies, junction temperatures rise quite easily, even when modest currents are passed. GeneSiC claims that high-voltage SiC rectifiers offer unique characteristics that promise to revolutionize micro-solar inverters and high-voltage assemblies.

GeneSiC’s GB01SLT06-214 (650V/1A), GB02SLT12-214 (1200V/2A) and GAP3SLT33-214 (3300V/0.3A) Schottky rectifiers feature zero reverse recovery current that does not change with temperature. The maximum junction temperature (Tjmax) is 175oC. In particular, the 3300V-rated devices offer relatively high voltage in a single device, allowing a reduction in the number of voltage multiplication stages required in typical high-voltage generator circuits, through the use of higher AC input voltages.

The near-ideal switching characteristics allow the elimination or dramatic reduction of voltage-balancing networks and snubber circuits. The SMB (DO-214AA) overmolded package features an industry-standard form factor for surface-mount assemblies.

“The SMB form factor is a key differentiator for the micro solar inverter and voltage multiplier market,” believes president Dr Ranbir Singh. “GeneSiC's low-VF, low-capacitance SiC Schottky rectifiers and improved SMB packages enables this breakthrough product.” The typical VF and reverse recover charge are, respectively, 1.5V and 7nC for the GB01SLT06-214; 1.5V and 14nC for the GB02SLT12-214; and 1.7V and 52nC for the GAP3SLT33-214.

All devices are 100% tested to full voltage/current ratings. Technical support and SPICE circuit models are offered.

Tags: GeneSiC SiC Schottky diode

Visit: www.genesicsemi.com/index.php/sic-products/schottky