21 May 2013

Freescale launches GaAs pHEMT-based broadband LNA to optimize receiver performance

Freescale Semiconductor of Austin, TX, USA, which provides RF power technology for cellular markets, has introduced an enhancement-mode pseudomorphic high-electron-mobility transistor (pHEMT) low-noise amplifier (LNA) based on GaAs process technology, designed to optimize receiver performance for a broad array of wireless systems operating at 700-1400MHz. Typical applications include small-cell and macrocell transceivers, as well as a range of applications requiring extremely low noise figures, high linearity, and high RF output power.

The noise figure of the new MML09231H is 0.36dB at 900MHz, which is claimed to be one of the lowest noise figures of any small-signal device in the industry. This performance level suits receiver design, says the firm, because it can boost product sensitivity to very low-level signals. The MML09231H also has an output third-order intercept point (OIP3) of 37.4dBm at 900MHz, delivering the high linearity required by wireless systems.

The new LNA can tolerate a maximum input signal of +20dBm, has an RF output peak power of +24.5dBm (280mW), high reverse isolation of -21dB, small-signal gain of 17.2dB (externally adjustable), and current consumption of only 55mA from a single 5Vdc supply. Its features include an integrated power-down pin, active bias control for maintaining constant current, unconditional stability over temperature, and low external component count.

The MML09231H is now in full production. A reference test fixture is available for quick evaluation.

Tags: Freescale LNA GaAs pHEMT

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