12 March 2013

Fraunhofer IAF buys Veeco GEN200 MBE system for antimonide- and arsenide-based opto devices

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the Fraunhofer Institute for Applied Solid State Physics (Fraunhofer-IAF) of Freiburg, Germany, which develops electrical and optical devices based on compound semiconductors, has purchased a GEN200 molecular beam epitaxy (MBE) system. The new system will be used for R&D on antimonide- and arsenide-based III-V optoelectronic devices.

“We have been working with Veeco for more than a decade, and have had very good experiences with the existing Veeco MBE systems in our facility,” comments Dr Martin Walther, head of Fraunhofer IAF’s Infrared Detectors business unit. “Thus we decided in favor of Veeco’s fully automated production MBE systems as demand for epitaxial layers for antimonide-based III-V optoelectronics has increased,” he adds. 

“This new purchase extends our long-standing collaborative relationship with Fraunhofer IAF, one of the world’s top research facilities in the field of III-V semiconductors,” says Jim Northup, VP & general manager of Veeco’s MBE Operations. “Our GEN200 is known for its lowest-cost 4x4” epiwafer growth and it is the ideal tool to support Fraunhofer IAF’s expansion in growth services,” he reckons. 

Tags: Veeco MBE IAF

Visit: www.veeco.com/GEN200

Visit: www.iaf.fraunhofer.de/en.html