23 July 2013

Cree’s second-generation SiC MOSFETs used in Delta Elektronika’s latest generation of power supplies

Cree Inc of Durham, NC, USA says that its newly expanded portfolio of 1200V SiC MOSFETs is being incorporated into the latest power supplies from Netherlands-based Delta Elektronika BV. Consequently, Delta Elektronika has demonstrated a 21% decrease in overall power supply losses and a reduction in component count by up to 45% compared with power supply products using traditional silicon technology, it is reckoned.

Cree’s new SiC transistor improves both the efficiency and power density of the power supplies, comments Delta Elektronika’s director Job Koopmann. “The switching behavior is outstanding and controlling the MOSFET is simple and straightforward,” he adds. “This device is helping us to continue developing more reliable products.”

Since 1959, Delta Elektronika has produced power supplies for industrial applications such as specialized equipment used in factories, automation and industrial power conversion. “We are pleased to have Delta Elektronika BV as one of the volume adopters of our newest generation of SiC MOSFETs,” says Cengiz Balkas, general manager, Cree Power and RF. “Delta Elektronika BV has a half-century legacy of producing some of the most reliable, efficient and compact power supplies on the market,” he adds. “The industrial power supply market, which values efficiency, reliability and power density, is a key market for SiC MOSFET technology. Our new second-generation SiC MOSFET portfolio, which now includes a 160m-Ohm MOSFET for the 5-10kW market, is receiving strong market pull.”

Cree says that its second-generation SiC MOSFETs (launched in March) are experiencing an increasing rate of adoption in several key applications, including a design-in at a major manufacturer’s next-generation PV inverters. With SiC, power supply manufacturers can reduce their component count to help improve reliability while maintaining or improving the power supply’s efficiency, the firm adds. Improving power density can also lead to reductions in the size, weight, volume and, in some cases, the cost of power supplies. SiC has been demonstrated to achieve more than twice the power density of typical silicon technology in standard power supply designs.

Packaged SiC MOSFETs from Cree are available from DigiKey,Farnell/Newark, Richardson and Mouser, and die are available from SemiDice. 

Tags: Cree SiC MOSFET

Visit: www.cree.com/power