18 April 2013

University of Cambridge installs Aixtron CCS MOCVD system for 6-inch GaN-on-Si wafer growth

Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that the University of Cambridge has commissioned another multi-wafer Aixtron Close Coupled Showerhead (CCS) MOCVD reactor at its new facility at the Department of Material Science and Metallurgy. The CCS 6x2-inch system will be configured to handle single 6-inch (150mm) wafers (1x6-inch).

“We will be using the systems to expand our research efforts for LED and electronic devices based on gallium nitride (GaN) epitaxy on 6-inch silicon wafers,” comments Professor Sir Colin Humphreys, Director of Research in the Department of Materials Science and Metallurgy. “We already use one CCS 6x2-inch system in our work, but the gathering pace of GaN-on-Si development means that we need an extra system with large diameter wafer handling.”

Tony Pearce, managing director at Aixtron Ltd, said: “Aixtron is proud to continue its long-standing collaboration with the University of Cambridge and to supply another state-of-the-art CCS research system to complement the university’s existing reactor. Under Prof. Humphreys’ lead, the Cambridge group has developed world leading GaN-on-Si processes and we look forward to further supporting this work with this new system.”

Dr. Frank Schulte, vice president Aixtron Europe, added: “We are very pleased to announce this repeat order from Prof. Colin Humphreys and his team, pioneers of the GaN-on-Si technology, as they push the industry forward to success. Using silicon substrates for power electronics and LED applications, this technology should gain a big share from the existing market.”

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Tags: Aixtron MOCVD GaN-on-Si

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