10 September 2012

Nantong Tongfang opts for Veeco TurboDisc K465i MOCVD system for GaN-on-Si HB-LED research

China’s Nantong Tongfang Semiconductor Co Ltd has received shipment of a TurboDisc K465i MOCVD system from epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA. The system will be used to research gallium nitride-on-silicon (GaN-on-Si) high brightness light emitting diodes (HB-LEDs).

“We successfully utilize Veeco’s MOCVD systems in our current production of GaN-on-sapphire based LEDs. It was the logical choice to select Veeco for our new research into GaN-on-Si based LED devices. This is going to be a significant focus of our future R&D investment over the next few years,” said Professor Liu Gang, general manager of Nantong Tongfang Semiconductor.

Veeco’s K465i features film quality and low defects, key requirements for GaN-on-Si processing. It also incorporates Veeco's Uniform FlowFlange technology for superior uniformity and excellent run-to-run repeatability. Low maintenance TurboDisc technology enables highest system availability, excellent particle performance and high throughput, says Veeco. The production-proven K465i provides ease-of-tuning for fast process optimization on wafer sizes up to 8 inches and fast tool recovery time after maintenance.

Jeff Hawthorne, Veeco’s senior vice president, MOCVD, said: "Many of our LED customers are developing GaN-on-Si technology, which offers the potential to accelerate the adoption of solid-state lighting by reducing the cost of making LEDs without compromising end-product quality. We are glad to support Tongfang in their research efforts.”

See: Veeco Company Profile

Tags: Veeco Nantong Tongfang MOCVD TurboDisc K465i GaN-on-Si HB-LEDs

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