5 September 2012

Kyma enters GaN growth equipment market with launch of HVPE system

Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN), aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) materials and related products and services, is to enter the GaN crystal growth equipment market, with the introduction of its Kyma100 HVPE system.

HVPE (hydride vapor phase epitaxy) is a proven high growth rate process for producing high purity crystalline compound semiconductor materials, including GaN, GaAs, InP, and CdS. It is the dominant process used today for production of free-standing GaN substrates and recently has been used by Kyma and others to produce high quality GaN on sapphire templates and GaN on silicon templates. HVPE grown GaN templates have major advantages over free-standing GaN in terms of cost per unit area and diameter scalability, says Kyma.

“Demand for our AlN and GaN template products is growing, yet many of our volume customers prefer to bring the template manufacturing process in-house,” said Keith Evans, Kyma's president and CEO. “Adding HVPE equipment to our product line is a natural step in Kyma’s growth, and represents the first of several new equipment product offerings we plan to announce in the coming weeks.”

The Kyma100 HVPE System leverages over a decade of company experience in the design, construction, and application of HVPE process equipment for manufacturing GaN materials. It’s high purity, vertical flow, hot wall design supports production of n-type conductive GaN at growth rates up to 500 microns per hour. Complete with a process for production of high quality GaN on sapphire templates, the system can grow up to three (3) 2-inch diameter wafers or one (1) 4-inch diameter wafer at a time.

Tags: Kyma GaN AlGaN AlN GaN-on-Si template AlN-on-Si template HVPE

Visit: www.kymatech.com