14 September 2012

AZZURRO issues white paper detailing migration to GaN-on-Si LEDs with 150mm templates

AZZURRO Semiconductors AG of Dresden, Germany, which makes gallium nitride (GaN) epitaxial wafers based on large-area silicon substrates, has released a white paper that describes the easy migration of LED manufacturing to GaN-on-Si. Using its 150mm templates, the advantages of GaN-on-Si can be exploited after very short design-in times, claims the firm.

The white paper outlines the technical hurdles to be overcome when migrating to GaN-on-Si, covers key achievements possible when using the right technology, details the advantages of moving to GaN-on-Si obtainable with templates, and shows development solutions to the LED epitaxy engineer.

Detailed data for GaN-on-Si products is revealed regarding its very high crystalline quality (with etch-pit density, EPD, of 2x108cm-2), excellent homogeneity (< 4nm wavelength distribution) and very low bow values (< 20μm).

Enabled by AZZURRO’s thick GaN-buffer as well as its patented and proprietary strain-engineering technology, these achievements permit the full utilization of the advantages of GaN-on-Si, says the firm. These include reduced binning due to superior homogeneities.

Furthermore, the large wafer diameter and low bow values allow the use of standard silicon processing lines, offering cost breakthroughs for wafer processing and back-end manufacturing. In addition, the advantages of using templates for the move to GaN-on-Si are covered as contributors to cost reduction, including better utilization of epitaxy reactors.

“Our plug-and-play approach, supported by our application note and engineering support assures a smooth migration from the legacy materials towards GaN-on-Si with easy to process, larger wafer sizes in standard silicon processing lines at much lower costs,” says VP operations Dr Markus Sickmoeller.

As part of easing the move to GaN-on-Si, AZZURRO is delivering standard migration packages to customers that include dedicated engineering support from its team of experts.

The white paper aims to support the LED industry’s move to GaN-on-Si and will be presented at the Digitimes Tech Forum (DTF 2012) in Taipei, Taiwan on 13 September.

Tags: AZZURRO GaN-on-Si

Visit: www.azzurro-semiconductors.com (PDF File)