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26 October 2012

TriQuint showcasing new products at EuMW

RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA, is showcasing twelve new products at European Microwave Week in Amsterdam next week (29-31 October). These include new packaged transistors and amplifiers, including four based on gallium nitride (GaN) and four based on gallium arsenide (GaAs) technology, and a family of RF GPS diplexers that reduce PCB space nearly three times compared to ceramic filter products. The products support a wide variety of commercial and defense applications such as emergency responder radios, electronic warfare, radar solutions and test equipment.

Picture: TriQuint’s new products on show at EuMW.

Besides showcasing its new products at EuMW, TriQuint will present new radar and sensing technology solutions in the European-focused 'Defence, Security and Space Forum' on 31 October in the main auditorium of the RAI Center. The presentation will focus on new GaN products and integrated assemblies for the changing needs of global security and defense systems. Admission is free.

Technical specifications for TriQuint’s new RF transistor and amplifier products, sampling now:

  • T1G6003028-FS: DC-6GHz GaN RF power transistor: 30W; 14dB gain at 3.5GHz; 10dB gain at 6GHz; drain efficiency: 55% at 3.5GHz/44% at 6GHz; 28V at 200mA, withstands 10:1 VSWR, EAR99 flangeless package.
  • T1G6003028-FL: DC-6GHz GaN RF power transistor: 30W; 14dB gain at 3.5GHz; 10dB gain at 6GHz; drain efficiency: 55% at 3.5GHz/44% at 6GHz; 28V at 200mA, withstands 10:1 VSWR, EAR99 flanged package.
  • T1G4003532-FS: DC-3.5GHz GaN RF power transistor: 37W CW; more than 16dB gain at 3.5GHz; 10dB gain at 6GHz; power-added efficiency: 60% at 5GHz/49.6% at 6GHz; 32V at 2.4A; withstands 10:1 VSWR; EAR99 flangeless package.
  • T1G4003532-FL: DC-3.5GHz GaN RF power transistor: 37W CW, more than 16dB gain at 3.5GHz; 10dB gain at 6GHz; power-added efficiency: 60% at 5GHz/49.6% at 6GHz; 32V at 2.4A; withstands 10:1 VSWR; EAR99; flange mount package.
  • TGA2502-GSG: 13-16GHz GaAs pHEMT RF power amplifier: 2.8W; 20dB large-signal gain; 25dB small-signal gain; 25% efficiency; 7V at 1.3A; 14-lead flange mount package.
  • TGA2704-SM: 9-11GHz GaAs pHEMT RF power amplifier: 7W; 19dB large-signal gain; 22dB small-signal gain; 40% power-added efficiency; 9V at 1.05A; 7mm x 7mm x 1.27mm leadless SMT package.
  • TGA2710-SM: 9.5-12GHz GaAs pHEMT RF power amplifier: 7W; 19dB large-signal gain; 20dB small-signal gain; 36% power-added efficiency; 9V at 1.05A; 7mm x 7mm x 1.27mm leadless SMT package.
  • TGA2575-TS: 32-38GHz GaAs pHEMT RF power amplifier: 3W; 19dB small-signal gain; 22% power-added efficiency; 6V at 2.1A. TGA2575 die is mounted to an 8.92mm x 5.31mm thermal spreader.

TriQuint’s new diplexer family grew out of customer needs for performance and faster delivery, along with the option to change filters throughout production lifetimes, says the firm. In addition to quicker product delivery, the new approach allows customers to reduce the space needed for filter designs. The new plug-and-play, 5mm x 5mm x 2mm integrated products are orders of magnitude smaller than lumped element diplexers and nearly three times smaller than similar high-performance RF ceramic filter modules.

"TriQuint's new integration approach and focus on broad-market products is allowing us to be more responsive to customer requests," said Infrastructure and Defense Products VP & general manager, James L. Klein. "TriQuint's focus to expand our product lines and deliver more products to customers more quickly has resulted in a new approach to filter technology. This new design and manufacturing flexibility will enable our global customers to bring their products to market faster than ever."

Technical specifications for TriQuint’s new diplexer products, sampling now:

  • 890084: SAW high-rejection diplexer module for GPS: L1 band (857140): 1575.42MHz center frequency, 35dB rejection (824-960MHz); 34dB (1710-2170MHz). L2 band (857142): 1227.6MHz center frequency, 47dB rejection (464-600MHz) and 36dB (1360-1820MHz); requires no matching; 5mm x 5mm x 2.1mm SMT package.
  • 890085: SAW low-loss diplexer module for GPS: L1 band (857139): 1575.42MHz center frequency, 20dB rejection (824-960MHz); 21dB (1710-2170MHz). L2 band (857141): 1227.6MHz center frequency, 29dB rejection (464-600MHz) and 18dB (1360-1820MHz); requires no matching; 5mm x 5mm x 2.1mm SMT package.
  • 890086: SAW high-rejection diplexer module for GPS: L1 band (857140): 1575.42MHz center frequency; 34dB rejection (824-960MHz); 33dB (1710-2170MHz). L5 band (857144): 1176.45MHz center frequency; 46dB rejection (414-550MHz); 36dB (1310-1770MHz); requires no matching; 5mm x 5mm x 2.1mm SMT package.
  • 890087: SAW low-loss diplexer module for GPS: L1 band (857139): 1575.42MHz center frequency; 19dB rejection (824-960MHz); 18dB (1710-2170MHz). L5 band (857143): 1176.45MHz center frequency; 30dB rejection (414-550MHz); 19dB (1310-1770MHz); requires no matching; 5mm x 5mm x 2.1mm SMT package.

Tags: TriQuint GaN GaAs RF power transistors RF PAs Diplexer

Visit: www.triquint.com

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