13 November 2012

RFMD debuts 5-1000MHz, push-pull, high-linearity InGaP HBT amplifier

RF Micro Devices Inc of Greensboro, NC, USA says that its new RFCA1008 is a heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) amplifier designed with indium gallium arsenide (InGaP) process technology for high reliablility. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.

For broadband performance, a Darlington configuration is used. The RFCA1008 contains two amplifiers for use in wideband push-pull CATV amplifiers requiring excellent second-order performance (the second- and third-order non-linearities are greatly improved in the push-pull configuration).

Features include: a 5V single supply; excellent linearity performance at +34dBmV output power per tone; two amplifiers in each SOIC-8 package, simplifying push-pull configuration PC board layout; and availability in lead-free, RoHS-compliant packaging. 

Applications include CATV head-end driver and pre-driver amplifiers and CATV line driver amplifiers. Currently available in production quantities, pricing begins at $2.60 each for 750 pieces.

Tags: RFMD InGaP HBT

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