16 May 2012

SemiSouth granted its 30th US patent

SemiSouth Laboratories Inc of Starkville, MS, USA (which designs and manufactures silicon carbide devices for high-power, high-efficiency, harsh-environment power management and conversion applications) has been granted its 30th US patent by the US Patent and Trademark Office. The firm claims that its SiC power semiconductor transistors and diodes are rapidly gaining market share in the solar, UPS (uninterruptible power supply), traction, wind, automotive and aerospace industries due to their superior performance in high-efficiency, harsh-environment power applications.

US Patent 8,169,022 ‘Vertical Junction Field Effect Transistors and Diodes Having Graded Doped Regions and Methods of Making’ was co-invented by Dr Michael Mazzola, a co-founder of SemiSouth in 2000 when the firm spun off from Mississippi State University.

“The underlying technology in this patent allows SemiSouth to fine tune their already performance-leading vertical channel junction field-effect transistors and diodes to get ever closer to the unipolar theoretical limit,” says Mazzola. “Customers can expect even better value from the products based on this patent,” he adds. “Our technology is state-of-the-art in terms of performance per unit area,” claims co-founder, president & chief technology officer Dr Jeffrey B. Casady.

In addition to 30 its US patents, SemiSouth possesses 24 patents internationally and has 204 applications pending worldwide.

Tags: SemiSouth SiC SiC JFETs

Visit: www.semisouth.com