10 May 2012

Millitech launches GaN-based E- and W-band millimeter-wave solid-state power amplifiers

Millitech Inc of Northampton, MA, USA, a Smiths Interconnect business that designs and manufactures millimeter-wave components, assemblies and fully integrated antenna positioning systems for satellite communications, radar, passive imaging, space and remote sensing applications, says it is now offering gallium nitride (GaN)-based E-band and W-band solid-state power amplifiers able to achieve small size and high power.

The firm claims that the power amplifiers represent a leap in output power at E-band and W-band frequencies, with up to 3W of output power and up to 20% power-added efficiency (PAE) available in standard models. The new AMP models offer catered performance over specific allocated bands or wideband power covering frequencies of 75-102GHz.

The E-band (WR-12) models cover the commercially allocated 71-76GHz and 81-86GHz bands. The W-band models cover 75-102GHz.

Each amplifier has internal bias circuitry that generates gate control voltages, provides proper voltage sequencing, and incorporates reverse voltage protection from a single positive external bias.

Single device models are available with nearly 1W of saturated output power. Standard models also include 2-way and 4-way solid-state power amplifiers (SSPAs) with up to 3W of saturated output power. Higher powers are available.

Tags: GaN

Visit: www.millitech.com