10 May 2012

Dow Corning extends SiC epitaxy capabilities with order for additional Aixtron AIX 2800G4 WW Planetary Reactors

Dow Corning of Auburn, MI, USA has extended its silicon carbide (SiC) epitaxy capability with an order for two additional AIX 2800G4 WW Planetary Reactor platforms from Aixtron SE of Herzogenrath, Germany, due to be commissioned in Q2/ 2012.The platforms can be configured for 10x100 mm and 6x150 mm SiC wafers.

“Extending our SiC epitaxy capabilities illustrates our commitment to helping our customers grow and succeed and our leadership’s commitment to the business,” said Tom Zoes, industry director, Power Electronics business, Dow Corning Corporation. “Dow Corning’s epitaxy technology on the Aixtron G4 deposition platform provides our customers with materials capability that enables the creation of high performance, next generation power electronics devices addressing the world’s growing demand for energy efficient solutions.”

Dr. Frank Wischmeyer, vice president and managing director of Aixtron AB, Sweden, added, “We are
pleased with the performance of the AIX 2800G4 WW system at Dow Corning. Repeat orders like this are indicators about the quality of our systems and their ability to provide a solid return on investment for our customers.”

See: Aixtron Company Profile

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