19 March 2012

TriQuint launches 30W, 2.5-6GHz GaN PA with 35% PAE for communications and defense applications

In conjunction with exhibiting at the 2012 Government Microcircuit Applications and Critical Technology Conference (GOMACTech 12) in Las Vegas this week (19-22 March), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has launched a new packaged, 30W wideband gallium nitride (GaN) power amplifier with high power and efficiency for defense, communications and general test applications.

Fabricated using TriQuint’s 0.25-micron, production-released GaN on SiC process and available in a standard, surface-mount flange package, the TGA2576-FL delivers 30W of saturated output power (45.5dBm) across the 2.5-6GHz frequency range, and typically offers 35% power-added efficiency (PAE) and 26dBm of small-signal gain. Samples and evaluation fixtures are now available. The TGA2576-FL is also generally exportable.

Also at the GOMACTech conference TriQuint is presenting three new papers highlighting its GaN research and product development, detailing enhancement/depletion (E/D)-mode InAlN/GaN devices and new GaN thermal management techniques, as well as an integrated GaN X-band amplifier.

TriQuint says that its GaN portfolio (which includes amplifiers, transistors and switches) offers the performance and dependability demanded for defense, aerospace and commercial applications, and that it provides design assistance and support built around enabling the use of new high-efficiency GaN circuits. The firm adds that interest in GaN technology continues to grow as it transitions from defense applications (that initially demonstrated its capabilities) into mainstream commercial markets (where its frequency range, power density, efficiency and device size are superior to other semiconductor technologies).

Tags: TriQuint GaN power amplifier

Visit: www.triquint.com