20 June 2012

Toshiba launches high-gain, high-power X-band GaN hybrid IC supporting AESA & PESA radar

In booth 2710 at the 2012 IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada (19-21 June), Toshiba America Electronic Components Inc (TAEC) and its parent company Toshiba Corp of Tokyo, Japan have launched the TGM9398-25 gallium nitride (GaN) hybrid IC (HIC), optimized for high gain and power. Available in small hermetically sealed packages, the gain-enhanced HIC is targeted at transmitter and receiver modules (TRMs) used in radar applications, such as active electronically scanned array (AESA) and passive electronically scanned array (PESA).

The new X-band hybrid IC operates in the 9.3-9.8GHz range, and has output power at 1dB gain compression point (P1dB) of 25W, or 44.0dBm (typical), linear gain (GL) of 25dB (typical) and power-added efficiency of 35%.

After Toshiba launched the TGI8596-50 50W discrete GaN internally matched HEMT for the X-band in 2008 followed by the TGI0910-50 in 2010, the new device is in a package that is footprint-compatible with the existing discrete internally matched GaN HEMT, supporting easy upgrades for legacy designs.

“The high power density of GaN technology makes this possible,” says Homayoun Ghani, business development manager, microwave devices, for TAEC’s Discrete business unit. "With the energy-saving features associated with higher gain, this hybrid IC will help our customers design more advanced telecommunication systems,” he believes.  

Samples of the GaN hybrid IC will be available in Q4/2012.

Tags: Toshiba GaN GaN HEMT

Visit: www.toshiba.com/taec