14 June 2012

RFMD makes available GaN and GaAs foundry PDKs for Agilent’s ADS EDA software

RF Micro Devices Inc of Greensboro, NC, USA says that its Foundry Services business unit has updated its process design kits (PDKs) for use with Agilent Technologies Inc’s Advanced Design System (ADS) 2011 electronic design automation (EDA) software (released in February). The enhanced PDKs are available immediately to current and prospective Foundry Services customers for RFMD’s gallium nitride (GaN) and gallium arsenide (GaAs) process technologies.

The PDKs support a complete ADS front- to back-end monolithic microwave integrated circuit (MMIC) design flow with scalable devices, a native design rule checker, and the layout capabilities in ADS 2011. The PDKs work seamlessly with ADS 2011, ADS 2009 Update 1 and ADS 2008 Update 2, enabling Foundry Services customers to take full advantage of the performance advantages of ADS 2011.

GaN and GaAs process technologies are available to Foundry Services customers, supported by what are claimed to be RFMD's cycle times. Foundry offerings include GaN1 (GaN for high power), a 0.5µm GaN-on-SiC process technology enabling 65V CW operation and optimized for maximum performance at 4GHz and below. The GaN1 power technology provides a high breakdown voltage above 400V, while RFMD’s GaN2 is a 0.5µm GaN-on-SiC process technology offering high linearity for high-performance communications systems. Both GaN technologies are manufactured in RFMD’s fabrication plant in Greensboro (one of the world’s largest III-V fabs).

The fab also manufactures HBT8D, RFMD’s high-volume rugged InGaP technology for handset and mixed-signal applications, and IPC3, an integrated passive component technology that complements the firm’s GaN technology portfolio with high-power compatibility.

Additional foundry offerings include FD25 (a low-noise, 0.25µm GaAs pHEMT technology) and FD30 (a high-power 0.3µm GaAs pHEMT technology), both of which support applications up through 25GHz. RFMD’s technology portfolio also includes FET1H (a 0.6µm GaAs pHEMT technology) and FET2D (a 0.6µm GaAs E/D pHEMT technology). Each of the pHEMT technologies is manufactured in the firm’s fab in Newton Aycliffe, UK.

“The ADS 2011 release provides RFMD Foundry customers access to Agilent’s latest multi-technology platform for our GaN and GaAs process technologies,” says Dr Tom Joseph, manager of technology in RFMD’s Foundry Services business unit. “By leveraging Agilent’s new Library architecture and simulation enhancements, RFMD’s foundry customers can improve their design efficiencies and reduce time-to-market for their end market products,” he adds.

“Our mutual customers can now leverage the ADS 2011 product enhancements in RFMD’s GaN and GaAs technologies,” says Juergen Hartung, foundry program manager of Agilent’s EEs of EDA organization. “With these PDKs, our customers can now enjoy the industry’s most comprehensive multi-technology design platform using Momentum, the industry-leading 3D planar EM simulator, our integrated full 3D FEM [finite-element method] engine, the industry-proven design-for-manufacturing capabilities inside ADS, and an upgraded design rule checker,” he adds.

Tags: RFMD Agilent PDK

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