7 June 2012

RFMD launches 225-1215MHz, 9W GaN wideband power amplifier

RF Micro Devices Inc of Greensboro, NC, USA has launched the RFHA1006, a wideband power amplifier designed for continuous-wave (CW) and pulsed applications including: class AB operation for public mobile radio; power amplifier stages for commercial wireless infrastructure; general-purpose Tx amplification; test instrumentation; two-way radios; and civilian and military radar.

Using a high-power-density gallium nitride (GaN) HEMT process, the amplifier achieves high power-added efficiency (PAE = 60%), flat gain (of 16dB), and large instantaneous bandwidth (225-1215MHz) in a single amplifier design. The input-matched GaN transistor is packaged in an air-cavity ceramic package for what is claimed to be excellent thermal stability through the use of advanced heat-sink and power dissipation technologies.

Ease of integration is accomplished through the incorporation of an optimized 50Ω input-matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.

Operating from a 28V supply, output power is typically 9W (39.5dBm). The operating temperature is -40°C to 85°C. Large-signal models are available.

Tags: RFMD GaN GaN HEMT

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