10 July 2012

Veeco presenting on reactant injector temperature effect on III-nitride deposition

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA is exhibiting and presenting at the 4th International Symposium on Growth of III-Nitrides (ISGN4) on Wednesday in St. Petersburg, Russia (16-19 July). The symposium is part of a biannual series focusing on the growth of III-nitride materials, nanostructures and device structures.

Dr Alex Gurary, Veeco’s senior director, MOCVD Hardware Test, is presenting ‘Reactants injector temperature effect on III-Nitrides materials deposition in the high speed vertical rotating disc MOCVD reactor’. Gurary has a Ph.D. in Material Science and over 20 years of experience with metal-organic chemical vapor deposition (MOCVD) equipment.

Veeco says that its MOCVD equipment for high-brightness LED production deliver high wavelength uniformity, footprint efficiency, and a range of single- and multi-reactor platforms.

ISGN4 is organized by the Ioffe Physical-Technical Institute of Russian Academy of Sciences. Launched in Sweden in 2006, then Japan in 2008, France in 2010 and now Russia, it is the fourth symposium in a biannual series focusing specifically on the growth of III-nitride materials, nanostructures and device structures.

See: Veeco Company Profile

Tags: Veeco MOCVD GaN

Visit: www.ioffe.ru/ISGN4

Visit: www.veeco.com