18 July 2012

Hittite launches 4.5mm² MMIC LNA covering 0.3-3GHz

Hittite Microwave Corp of Chelmsford, MA, USA (which designs and supplies analog, digital and mixed-signal RF, microwave and millimeter-wave ICs, modules and subsystems as well as instrumentation) has launched a broadband gallium arsenide pseudomorphic high-electron-mobility transistor (GaAs pHEMT) monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA).

The HMC374SC70E is housed in a compact 2.15mm x 2.1mm (4.5mm²) surface-mount package and suits automotive, fixed wireless, CATV, microwave radio, cellular infrastructure and repeater applications operating at 0.3-3.0GHz.

The device is a high-dynamic-range pHEMT MMIC LNA that delivers 1.6dB noise figure, +34dBm output IP3 and 14dB small-signal gain at 900MHz. With saturated output power up to +19dBm and output IP3 to +36dBm, it is suitable for driving the LO port of high-linearity mixers and for transmitter pre-driver applications. This broadband MMIC LNA requires no external matching, is unconditionally stable, and operates from a single supply ranging from +3V to +3.6V. Compared with a discrete implementation, the HMC374SC70E enables higher reliability, better consistency, less PCB area, and reduced component count, claims Hittite.

The HMC374SC70E consumes just 75mA from a +3.3V supply and is housed in an RoHS-compliant plastic surface-mount package. It is also available in a SOT-26 package as the HMC374E.

Tags: Hittite MMIC LNA

Visit: www.hittite.com