26 January 2012

Powerex launches low-profile SiC MOSFET modules with multiple circuit topologies

Powerex Inc of Youngwood, PA, USA has launched two split dual silicon carbide (SiC) MOSFET modules (QJD1210010 and QJD1210011) designed for use in high-frequency power applications.

Created with a low profile and multiple circuit topologies (including independent, dual, in parallel, common collector, and common emitter), each module consists of two MOSFET SiC transistors, with each transistor having a reverse-connected Zero Recovery free-wheel SiC Schottky diode made by Cree Inc of Durham, NC. All components and interconnects are isolated from the heat-sinking baseplate, offering simplified system assembly and thermal management.

Rated at 100A/1200V, the modules incorporate two individual switches, each featuring a junction temperature of 175°C, low internal inductance and capacitance, and what is claimed to be industry leading RDS(on). As well as having high power density, this allows high-speed switching with low switching losses and low drive requirements. The isolated baseplates are copper on the QJD1210010 and (for extended thermal cycle life) AlSiC on the QJD1210011.

The modules can be used in high-frequency applications including: energy-saving power systems (such as fans, pumps and consumer appliances); high-frequency-type power systems (such as UPS, high-speed motor drives, induction heating, welding and robotics); and high-temperature power systems (such as power electronics in electric vehicle and aviation systems).

Tags: Powerex SiC MOSFET

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