23 January 2012

Opto Diode launches wide-emission, high-power IR LEDs

Opto Diode Corp of Newbury Park, CA, USA (a division in the Photonics Group of ITW) has launched the first of a family of three new infrared (IR) emitters. The OD-850W gallium aluminum arsenide (GaAlAs) LED features a wide emission angle for coverage over a large area, plus extremely high optical output (minimum 30mW, typically 40mW), with peak emission wavelength at 850nm.

The new device is an upgrade and replacement for the OD-880W IR LEDs, offering nearly double the output power, added stability, and much less degradation. Also, the 850nm wavelength is more closely matched to the peak response of photo-transistors and optoelectronic integrated circuits (ICs), making them suitable for industrial control applications such as photoelectric controls and optical encoders.

Hermetically sealed, the standard TO-46 package is designed with gold-plated surfaces and welded caps for added durability. The IR LED offers optical power of 40mW (typical) at 100mA, continuous forward current at 100mA and peak forward current at 300mA (absolute maximum ratings at 25°C). The storage and operating temperatures range from -40°C to 100°C, with a maximum junction temperature of 100°C.

The OD-850W IR LEDs are priced at $2.80 each (minimum order of 100 pieces).

Tags: Opto Diode IR LEDs GaAlAs

Visit: www.optodiode.com