17 January 2012

United Silicon Carbide to develop next-generation SiC devices using Aixtron SiC Planetary reactor

Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that United Silicon Carbide Inc (USCi) of Princeton, NJ, USA, is to develop the next generation of SiC devices using an Aixtron VP2400 Hot-Wall CVD reactor. The system was received in the fourth quarter of 2011 and will be delivered in third-quarter 2012.

USCi specializes in the development of SiC devices including Schottky barrier diodes, junction filed-effect transistors (JFETs), bipolar junction transistors (BJTs), solid-state circuit breakers, power modules, and custom SiC integrated circuits.

“Having evaluated the market for SiC epitaxy equipment, and based upon our success with merchant SiC epitaxy vendors utilizing similar tools, we have selected the Aixtron VP2400HW system for the superior quality of both n- and p-type SiC epitaxial layers,” says USCi’s director of engineering Dr John Hostetler. “The versatility of the 2400 system will enable USCi to rapidly develop novel device designs. The system’s ability to achieve high growth rates make it an ideal platform to develop our next generation high voltage (5-15kV) SiC devices with thicknesses in excess of 100 microns,” he adds. “Aixtron Planetary Reactors are becoming the standard for high-volume SiC device production, and our ownership of a 2400 will greatly facilitate our production process transfer to our merchant epitaxial wafer partners,” Hostetler continues.

“Our SiC Planetary Reactor technology has continued to evolve over the past 10 years,” says Dr Frank Wischmeyer, VP & managing director of Aixtron AB, Sweden. “Our extensive experience and know-how in the SiC deposition process is evident in the current design,” he adds.

See: Aixtron Company Profile

Tags: Aixtron SiC

Visit: www.unitedsic.com

Visit: www.aixtron.com