6 February 2012

Epistar chooses Veeco K465i MOCVD system for GaN-on-Si LED development

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that its TurboDisc K465i gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) system has been selected by Taiwan’s largest LED chipmaker Epistar Corp as the development tool for light-emitting diodes grown on silicon substrates.

“We are excited about the potential of GaN-on-Si technology as we move to larger wafer sizes,” says Epistar’s president M. J. Jou Ph.D. “We appreciate the strong support from Veeco, and look forward to this collaboration,” he adds.

The K465i provides low cost-of-ownership and production worthiness for Epistar’s GaN-on-Si LED development, says William J. Miller Ph.D., Veeco’s executive VP, Process Equipment. “Large-diameter Si wafers offer tremendous promise as a low-cost alternative to sapphire for volume production of lower-cost LEDs,” he concludes.

See related items:

Epistar qualifies Veeco’s MaxBright MOCVD system for high-volume production

Epistar places multi-tool order for Veeco K465i GaN MOCVD systems

See: Veeco Company Profile

Tags: Veeco MOCVD GaN LEDs Epistar TurboDisc K465i

Visit: www.veeco.com/products/mocvd.aspx

Visit: www.epistar.com.tw