6 February 2012

LG Siltron selects Veeco K465i MOCVD system for GaN-on-Si epi production

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that its TurboDisc K465i gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) system has been selected by South Korean electronics materials manufacturer LG Siltron as its first system for the production of gallium nitride on silicon (GaN-on-Si) epitaxial wafers for power electronics and LED devices.

As traditional silicon-based power transistors approach their limits, materials such as GaN are gaining popularity to speed energy conversion at lower costs, says Veeco. A wide range of industries, including many in ‘green-tech’ such as wind, solar, smart grid and hybrid electric vehicles, are driving demand for energy-efficient GaN-based power electronics. GaN-on-Si may also offer an alternative approach to LED manufacturing, notes the firm.

The K465i offers “unparalleled throughput advantages, and its TurboDisc technology provides superior uniformity and low particle count, which is critical for producing GaN-on-Si wafers,” comments Dr Hee Bog Kang, general manager of LG Siltron R&D. “We appreciate the strong support we have received from Veeco, and look forward to this and future collaborations,” he adds.

The K465i provides low cost-of-ownership and best-in-class yields, says William J. Miller Ph.D., Veeco’s executive VP, Process Equipment, commented, who looks forward to supporting LG Siltron as they ramp production. “The market for GaN-on-Si power devices continues to grow, and the K465i offers many advantages, such as improved device performance, lower manufacturing costs and increased productivity,” he adds.

See: Veeco Company Profile

Tags: Veeco MOCVD GaN LEDs TurboDisc K465i

Visit: www.lgsiltron.co.kr

Visit: www.veeco.com