16 February 2012

Anadigics launches MMPAs for quad-band GSM/EDGE and dual-band WCDMA/LTE 

RF and mixed-signal semiconductor maker Anadigics Inc of Warren, NJ, USA has made available engineering samples of the ALT6181 multimode multiband power amplifier (MMPA), which uses the firm’s third generation High-Efficiency-at-Low-Power (HELP3E) technology to provide what is claimed to be industry-leading efficiency in a single module solution for quad-band GSM/EDGE and dual-band WCDMA/LTE mobile applications. The combination of performance and integration helps to extend battery life and reduce RF space requirements in handsets, smart-phones, tablets, netbooks, and notebooks, it is claimed.

“Mobile devices continue to evolve in both form and function, creating performance and size constraint challenges on the RF front-end,” notes John van Saders, senior VP of RF products. “Our new multimode multiband power amplifiers extends our high-performance RF integration,” he adds. “By delivering a converged solution with industry-leading performance, we are able to provide manufacturers with greater design flexibility to enable the next-generation of mobile devices.”

Anadigics’ MMPAs are optimized for performance under LTE, WCDMA and CDMA signal modulations for bands 1,5,6,18,19 and 26. Efficiency, current consumption and linearity specifications have been enhanced for all modulations, while ensuring that critical harmonic, noise and intermodulation performance results in better phone-level performance. Anadigics’ MMPA solution uses the firm’s exclusive InGaP-Plus technology and HELP architecture to achieve optimal efficiency across low-range and mid-range output power levels, without the use of a DC-DC converter. When paired with a DC-DC convertor, the MMPA can deliver additional performance benefits, the firm claims.

The compact 5mm by 7.5mm MMPA features an integrated voltage regulator and separate single-ended RF chains. The inclusion of high-directivity couplers also ensures optimum system performance. The GSM performance is characterized by high efficiencies at all power levels, while the EDGE performance meets all stringent modulation mask requirements under all conditions.

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