28 August 2012

IPG expands GaAs laser production with Veeco GEN2000 MBE system

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has completed installation of a GEN2000 Edge molecular beam epitaxy (MBE) system at IPG Photonics Corp of Oxford, MA.

Founded in 1990, IPG manufactures high-power fiber lasers and amplifiers. Following IPG’s prior purchases of three GEN200 systems, the new GEN2000 system was ordered to expand its production of gallium arsenide (GaAs)-based lasers.

“We have been very pleased with the cost of ownership advantages and the unsurpassed performance of our previously purchased GEN200 systems,” comments Dr Alex Ovtchinnikov, VP-Components at IPG. “It made sense to scale-up to a higher-capacity GEN2000 system to accommodate our needs for increased throughput,” he adds.

Repeat orders from IPG attest to the performance of Veeco’s cluster-based systems for production applications, as well as its continuing, comprehensive support, reckons Jim Northup, VP & general manager of Veeco’s MBE Operations. 

The GEN2000 Edge MBE system delivers exceptional wafer quality in high-capacity production applications, claims Veeco, adding that its cluster tool design provides cost-effective 7x6” epiwafer growth of devices such as pump lasers, vertical-cavity surface-emitting lasers (VCSELs) and heterojunction bipolar transistors (HBTs). The cluster tool architecture also minimizes cleanroom space and downtime due to maintenance, increases throughput, and allows growth of different materials in connected modules.

See: Veeco Company Profile

Tags: Veeco IPG GaAs laser MBE

Visit: www.ipgphotonics.com

Visit: www.veeco.com