31 August 2012

Microsemi launches GaN-on-SiC RF transistor for secondary surveillance radar aviation applications

Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes high-reliability analog and RF devices, mixed-signal integrated circuits, FPGAs and customizable SoCs, and complete subsystems, based on silicon, gallium arsenide and silicon carbide) has launched the 1011GN-700ELM, the first in a family of radio-frequency transistors for high-power air traffic control (ATC) secondary surveillance radio (SSR) applications.

SSR is used to send a message to an aircraft equipped with a radar transponder and collect information that allows air traffic controllers to identify, track and measure the location of that particular airplane. Microsemi’s new 700W-peak 1011GN-700ELM operates at 1030MHz and supports short- and long-pulsed extended length message (ELM). The new transistor is based on gallium nitride (GaN) on silicon carbide (SiC) technologies, which are particularly well suited for high-power electronics applications.

“We are aggressively driving the development of next-generation GaN-on-SiC power devices to address growing opportunities for higher-performance aerospace and military applications,” says David Hall, VP of Microsemi’s RF Integrated Systems product group. “We now offer highly reliable GaN-on-SiC transistors at 250, 500 and 700W for secondary surveillance radar search and tracking applications,” he adds. “We also have several additional GaN-on-SiC transistors in development that we will be rolling out later this year.”

Microsemi’s upcoming product lineup includes multiple high-pulsed-power GaN-on-SiC transistors for L-, S- and C-band radar systems. The firm also offers a suite of GaN microwave power devices, which includes the following S-band radar models: 2729GN-150, 2729GN-270, 2731GN-110M, 2731GN-200M, 3135GN-100M, 3135GN-170M, 2735GN-35M and 2735GN-100M. Several new products are in development for L-band avionics products covering 960-1215MHz; L-band radar covering 1200-1400MHz; and S-band radar, higher-power devices covering 2.7-2.9GHz.

The 1011GN-700ELM transistor delivers performance of 700W of peak power with 21dB of power gain and 70% drain efficiency at 1030MHz to improve overall drain current and heat dissipation.

Other key product features include: short- and long-pulse burst formats (ELM = 2.4ms, 64% and
6.4% LTD); output power of 700W; high power gain of >21dB (minimum); a controlled dynamic range with 1.0dB increments (15dB total). The drain bias (Vdd) is +65V.

Microsemi says that systems benefits that are achieved with GaN-on-SiC high-electron-mobility transistor (HEMT) include:

• single-ended design with simplified impedance matching, replacing lower-power devices that require additional levels of combining;
• highest peak power and power gain for reduced system power stages and final stage combining;
• single-stage pair provides 1.3kW with margin, four-way combined to provide full system 4kW;
• a high operating voltage at 65V reduces the power supply size and DC
  current demand;
• rugged performance improves system yields; and
• amplifier size is 50% smaller than devices built with Si BJT or LDMOS technology.

The 1011GN-700ELM is offered in a single-ended package and is built with 100% high-temperature gold (Au) metallization and wires in a hermetically solder-sealed package for long-term military reliability.

Microsemi offers demonstration units that are put on loan to the customer for a few weeks. Due to the cost of the product, free samples are not provided. Demo units are available now to qualified customers and technical datasheets are available on the Microsemi website.

Tags: Microsemi GaN-on-SiC HEMT

Visit: www.microsemi.com