22 August 2012

M/A-COM Tech launches MMIC doubler with integrated gain, self-biased doubler and driver stages

M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications) has launched a gallium arsenide monolithic microwave integrated circuit (MMIC) doubler for VSAT applications.

The XX1010-QT is an active doubler in a RoHS-compliant 3mm x 3mm 16-lead plastic QFN package that delivers +20dBm output saturated power (Pout) and 35dBc fundamental suppression. Using a GaAs pseudomorphic high-electron-mobility transistor (pHEMT) process, the XX1010-QT covers the 14.625-15.0/29.25-30.0GHz frequency bands and integrates a gain stage, doubler and driver amplifier into a single device.

The doubler is suited to SatCom and millimeter-wave point-to-point radio applications, says the firm. The XX1010-QT integrates DC blocking and bypassing capacitors, eliminating the need for any external components. The device has a self-bias configuration, requiring only a positive 5V supply. The supply currency is 200mA.  Input return loss is 12dB and output return loss is 14dB.

“The high level of integration coupled with a standard 3mm x 3mm plastic QFN package offers our customers an optimal cost-effective solution by saving precious board area and reducing component count,” claims product manager Amer Droubi. “The XX1010-QT is an ideal driver stage to the final output power amplifier in Ka-band VSAT terminals.”

Tags: M/A-COM Tech MMIC doubler GaAs pHEMT

Visit: www.macomtech.com