1 September 2011

RFMD launches 225W and 280W GaN wideband pulsed power amplifiers

RF Micro Devices Inc of Greensboro, NC, USA has launched two new high-power discrete amplifiers designed for L-band pulsed radar, air-traffic control and surveillance, and general-purpose broadband amplifier applications. Both are based on gallium nitride (GaN) high-electron-mobility transistors (HEMTs) and integrate matching components for high terminal impedances.

Operating at a supply voltage of 50V, the RFHA1020 provides pulsed output power of 280W (with a 100µs pulse width at 10% duty cycle).

Operating at a supply voltage of 36V, the RFHA1023 provides pulsed output power of 225W (with a 1ms pulse width at 10% duty cycle).

Both amplifiers have 55% drain efficiency and small-signal gain of 15dB. They are packaged in a hermetic, flanged ceramic package that provides what is claimed to be excellent thermal stability with advanced heat-sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier covering the 1.2–1.4GHz frequency band.

For both amplifiers, an evaluation board is available with layout optimized for 50Ω operation.

Tags: RFMD GaN HEMTs

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