16 September 2011

Kyma’s new conductive and semi-insulating GaN templates provide added flexibility 

Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN), aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) materials and related products and services, has added two new products to its growing product portfolio.

The firm’s new semi-insulating (SE) GaN-on-sapphire template features a 5 micron thick layer of SE GaN grown on Kyma’s AlN-on-sapphire template. Typical resistivity ranges from ~1 x 106Ω-cm to more than 1 x 109Ω-cm; a product resistivity specification of Rs>105Ω-cm has been established.

Kyma’s new highly n-type conductive (n+) GaN-on-sapphire template features a 5 micron thick layer of n+ GaN grown on its AlN-on-sapphire template. Typical resistivity ranges from 5mΩ-cm to 10mΩ-cm; a product resistivity specification of Rs<20mΩ-cm has been established.

Kyma has been supplying GaN templates for several years but, until now, without electrical conductivity specifications. “Our previous GaN templates served as a great nucleation surface for advanced materials and device development efforts, but presented some limitations to the customer for certain device endeavors,” notes chief technology officer Ed Preble. “These new additions to our GaN template product line provide the customer with added flexibility in terms of what epilayer designs and device topologies can be used to achieve their goals,” he adds.

“We are pleased to respond to our customers requests to be given a choice in the conductivity of the GaN layer in our GaN-on-sapphire templates,” says technical sales engineer Tamara Stephenson.

Tags: Kyma GaN GaN templates

Visit: www.kymatech.com