13 September 2011

EPC introduces development board for systems using EPC2007 eGaN FETs

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC9006 development board, which the firm says will make it easier for users to start designing with its 100V enhancement-mode gallium nitride (eGaN) field-effect transistor (FET) in applications such as high-speed DC–DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high-frequency circuits.

The EPC9006 development board is a 100V maximum device voltage, 5A maximum output current, half bridge with onboard gate drives, featuring the 100V EPC2007 eGaN FET (launched last week). The board’s purpose is to simplify the evaluation process of the EPC2007 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

Measuring 2” x 1.5”, the EPC9006 development board contains not only two EPC2007 GaN FETs in a half-bridge configuration with gate drivers, but also an on-board gate drive supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

EPC9006 development boards are priced at $95 each and are available from Digi-Key. A ‘Quick Start Guide’ is included with the EPC9006 development board for reference and ease of use.

Tags: EPC GaN GaN FETs

Visit: http://digikey.com

Visit: www.epc-co.com