6 September 2011

EPC adds 2nd-generation 100V, 30 milliohm eGaN FET power transistor

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC2007 as the newest member of its second-generation enhanced-performance gallium nitride on silicon (eGaN) field-effect transistor (FET) family (which was launched in March with the EPC2001 and EPC2015, and added to in June with the EPC2010 and in August with the EPC2012 and EPC2014).

The EPC2007 FET is a 1.87mm2, 100VDS, 6A device with a maximum on-resistance RDS(ON) of 30 milliOhms. The firm says that this latest second-generation eGaN FET provides performance advantages over the first-generation EPC1007 device, since it is fully enhanced at a lower gate voltage and has greater immunity to fast switching transients.

Compared with a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2007 is much smaller and has many times superior switching performance, says EPC. Applications that benefit from eGaN FET performance include hard-switched and high-frequency circuits such as isolated DC–DC power supplies, point-of-load converters, and class D audio amplifiers.
EPC’s eGaN FET portfolio provides power design engineers with the opportunity to increase the efficiency and reduce the size of their power conversion systems compared with silicon-based MOSFETs, claims co-founder & CEO Alex Lidow.

The EPC2007 is environmentally friendly, being lead free, RoHS-compliant (Restriction of Hazardous Substances) and halogen free. In 1000-piece quantities, it is priced at $1.31 and is available through Digi-Key Corp.

Tags: EPC GaN GaN FETs

Visit: http://digikey.com

Visit: www.epc-co.com