26 September 2011

LG receives Aixtron G5 MOCVD reactor for GaN/Si applications

Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that in first-quarter 2011 existing customer LG Electronics Woomyeon R&D Campus (LG Electronics Advanced Research Institute) in South Korea ordered an AIX G5 HT metal-organic chemical vapor deposition (MOCVD) reactor in 8x6”-wafer configuration. Following delivery in third-quarter 2011 the reactor will be installed and commissioned by a local Aixtron service support team alongside the firm‘s existing AIXTRON MOCVD systems.

LGE will use the system to develop gallium nitride on silicon (GaN-on-Si) power electronics in partnership with Aixtron. The contract also includes a cooperation agreement optimize LGE‘s GaN/Si processes and to accelerate its proprietary device-oriented production. LGE aims to develop power electronic devices offering the best combination of performance and cost demanded by markets such as home appliances and electric vehicles.

Aixtron says that its equipment is particularly suited to customers such as LGE who plan to transition from R&D to mass production. LGE’s application will also benefit from the thickness uniformity across the wafers and across the plattern, as well as run-to-run dependability.  

Overall, the AIX G5 can fulfil the needs for LGE’s special process parameters and device structure, says Aixtron. It will also directly address the requirements for large-wafer process developments from the beginning. The mutual trust arising from many years of cooperation between LGE and Aixtron will continue through the new partnership on this GaN-on-Si project, which will involve expertise in installation and process development, say the firms.

See: Aixtron Company Profile

Tags: Aixtron MOCVD LG Electronics AIX G5 HT GaN

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