11 October 2011

TriQuint launches 18W wideband GaN HEMT delivering in defense/commercial applications to 6GHz

RF front-end product and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has launched the T1G6001528-Q3, a gallium nitride (GaN) packaged HEMT RF power transistor that delivers high output power and efficiency over a wide bandwidth (DC to 6GHz), suiting defense and commercial wireless communications, avionics, radar systems, electronic warfare jammer amplifiers, test equipment and applications in which high-power, broad frequency coverage and high efficiency are critical.

Commercial and defense systems place stringent demands on RF power devices, says TriQuint. They must combine high RF output power with high efficiency and gain across a wide bandwidth. The T1G6001528-Q3 is fabricated using the firm’s proven 0.25μm GaN on SiC process, which incorporates field-plate techniques that enhance RF output power and efficiency at high drain bias operating conditions. This has benefits for system designers because overall costs can be reduced as fewer RF power transistors and amplifiers are required to deliver a specific power level, which can decrease the system’s bill of materials and reduces thermal management requirements, says TriQuint.

“Nearly every application today requires RF power devices that are optimized for not just one, but all performance parameters,” says Richard Martin, Defense & Aerospace Transistor marketing manager. “The T1G6001528-Q3 is an excellent example of how gallium nitride technology can be applied to meet these challenges without trading off a key performance metric just to satisfy another,” he claims. “Compared to even robust technologies like GaAs, GaN provides superior wideband power, efficiency and gain.” The new packaged transistor delivers P3dB output power of at least 18W with drain efficiency of more than 60% at 6GHz, while providing the high gain (10dB) and ruggedness required by current applications, Martin adds.

The T1G6001528-Q3 operates from a 28VDC power supply, will deliver its rated output power into a maximum VSWR (voltage standing wave ratio) of 10:1 without damage, and is housed in TriQuint’s compact, low-thermal-resistance earless solder-down package.

Samples of the T1G6001528-Q3 and evaluation boards are available now.

Tags: TriQuint GaN GaN HEMT

Visit: www.triquint.com