17 November 2011

Next-gen power semiconductors to grow at CAGR of 72%

Traditional silicon-based power semiconductors are reaching their theoretical limitations but fortunately, because of their superior material properties, silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap power semiconductor devices can offer orders-of-magnitude better performance, notes the report ‘Next-Generation Power Semiconductors: Markets Materials, Technologies’ by market research firm The Information Network.

“The commercial battle for next-generation power semiconductors is evolving. As a result, many semiconductor manufacturers are attempting to enter the market,” says president Dr Robert Castellano. “Already it’s a $50m market, although small compared to the $14bn silicon-based power semiconductor market,” he adds.

Silicon-based insulated-gate bipolar transistors (IGBTs) and power metal-oxide-semiconductor field-effect transistors (MOSFETs) are seen as the main growth drivers. “We project 3.7% average annual growth of the power semiconductor market over the next three years, from $14.2bn in 2011 (+6% year-on-year) to $16.7bn in 2013,” Castellano says. “We look for strongest growth from IGBTs, although power MOSFETs had the largest market share in 2010 due to its fast switching speed, near-perfect gate impedance, excellent stability, and a relatively low on-state resistance,” he adds.

But because of their attractive performance, wide-bandgap power semiconductor devices have been the subject of intense R&D. In development since the early 1990s, SiC material for power device applications has gone through the longest period and come furthest in terms of maturity and reliability. “We project the next-generation power semiconductor will exhibit a compound annual growth rate of 72% between 2010 and 2015, reaching values of more than $500m,” says Castellano.

Benefiting from the growth of these wide-bandgap devices will be processing equipment. Significant improvements in the technique of growing GaN material on silicon substrates have enabled high-quality, crack-free GaN epi layers grown on Si, overcoming the 17% crystal mismatch between the two materials crystal faces. For GaN epitaxy on Si or SiC, deposition system suppliers Veeco and Aixtron will benefit and grow strongly, utilizing their expertise in LED epitaxy, reckons The Information Network.

Silicon MOSFETs use wirebonding and traditional SO or TO packages. GaN-on-Si can be bonded using flip chip. Companies that should benefit include equipment suppliers to the flip-chip industry, such as NeXX Systems, concludes the market research firm.

See related items:

RF & power electronics opportunities for GaN market growth

Energy efficiency driving demand for power management ICs

Tags: SiC GaN Power semiconductors

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