16 November 2011

Mitsubishi to launch DFB and APD for 10G-EPON optical network units

On 30 November, Tokyo-based Mitsubishi Electric Corp is to launch the ML7xx42 distributed feedback laser diode (DFB-LD) and the PD8xx24 avalanche photodiode (APD), suitable for the optical network units (ONU) in symmetric 10 gigabit Ethernet passive optical networks (10G-EPON).

While current fiber to the home (FTTH) services are mainly based on 1Gbps Gigabit Ethernet passive optical networks (GE-PON), symmetric 10G-EPON offering 10Gbps upstream and downstream performance are expected to be commercialized soon. However, 10G-EPON are simple networks that use optical couplers and require high-power DFB-LDs and high-sensitivity APDs due to optical loss in the couplers.

Picture: The ML7xx42 DFB laser diode.

Mitsubishi Electric’s new high-power, low-current DFB-LD and high-sensitivity APD are both suitable for symmetric 10G-EPON ONUs and hence can contribute to network simplification and faster broadband service, says Mitsubishi Electric.

The new DFB-LD has an aluminum gallium indium arsenide (AlGaInAs) active layer and offers output power of 10mW (with a peak light emission wavelength of 1270nm) despite a low operating current of 70mA at high-temperature conditions up to 75C, as well as 10Gbps high-speed performance due to improved modulation bandwidth. The ML7xx42 comes in a 4.8mm TO-CAN package with an aspherical lens cap with high coupling efficiency of 60% (typical).

Picture: The PD8xx24 avalanche photodiode.

The new low-noise APD has an aluminum indium arsenide (AlInAs) multiplication layer and operates in the 1570nm wavelength band. With a 5.4mm TO-CAN package with a ball lens cap, the PD8xx24 has a minimum sensitivity of -31.5dBm and an APD responsivity of 0.8A/W (typical). The bandwidth is 6.5GHz (typical value, at a multiplication factor of M=10). A new high-frequency circuit board yields suppressed noise output.

Tags: Mitsubishi Electric DFB laser diode APD AlGaInAs AlInAs

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