24 November 2011

Kyma advances AlN- and GaN-on-Si template product lines

Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN), aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) materials and related products and services, has announced advances in its AlN and GaN on silicon (Si) template product lines.

AlN-on-Si template products are fabricated using the firm’s patented plasma vapor deposition of nanocolumns (PVDNC) technology, which provides an excellent surface for subsequent deposition GaN- and AlN-based device structures, it is claimed. GaN-on-Si template products are fabricated using its patented hydride vapor phase epitaxy (HVPE) technology, which is performed on the PVDNC AlN-on-Si template. The associated manufacturing processes are as follows:

• PVDNC AlN growth process + Si substrate = AlN-on-Si template; and
• HVPE GaN growth process + AlN-on-Si template = GaN-on-Si template.

Key improvements to and facts associated with the AlN-on-Si template process include the following:

• no slip lines;
• qualified for customer growth of semi-insulating GaN for field-effect transistor (FET) applications; and
• AlN templates have been shipped in 2-inch, 100mm and 150mm diameter form factors, and have been demonstrated in 200mm and 300mm diameters.

Key improvements to and facts associated with the GaN on Si template process include the following:

• no slip lines;
• higher yield and more reliable process;
• faster and more reliable delivery schedules; and
• availability in 2-inch and 100mm diameters.

“We are pleased to offer improved AlN and GaN on Si template products and to shorten our delivery times too,” says technical sales engineer Tamara Stephenson. “Customer interest is great due to the device performance benefits that nitride semiconductor materials support, along with the cost and diameter advantages of an underlying silicon substrate,” she adds.

Tags: Kyma GaN AlGaN AlN GaN-on-Si template AlN-on-Si template PVDNC HVPE

Visit: www.kymatech.com