25 November 2011

Hittite launches ceramic-packaged GaAs MMIC SPDT switch operating up to 28 GHz

Hittite Microwave Corp of Chelmsford, MA, USA (which designs and supplies analog, digital and mixed-signal RF, microwave and millimeter-wave ICs, modules and subsystems as well as instrumentation) has launched a ceramic-packaged, gallium arsenide pseudomorphic high-electron-mobility transistor (GaAs pHEMT) monolithic microwave integrated circuit (MMIC) single-pole double-throw (SPDT) switch suitable for microwave radio, wideband telecom, electronic warfare (EW), industrial sensors, and test equipment applications from DC to 28GHz.

The HMC547LC3 is a wideband, high-isolation GaAs pHEMT MMIC SPDT switch that provides 40dB isolation and less than 2dB insertion loss at midband. It is controlled by two complementary logic inputs of -5/0V, and requires no DC bias supply. High input IP3 of +46dBm and fast switching speed of 6ns allow the switch to be used in many locations in advanced military and millimeter-wave transceivers and subsystems.

The HMC547LC3 is housed in a ceramic 3mm x 3mm leadless surface-mount package, and complements Hittite’s broad line of single, double and multi-throw switches with frequency coverage to 86GHz. For applications that require slightly less operating bandwidth, this same SPDT MMIC switch is also available in a 3mm x 3mm plastic QFN leadless package as the HMC547LP3E, operating from DC to 20GHz.

Tags: Hittite GaAs MMIC SPDT switch

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